Graphene

University produces 100-mm graphene wafers

Researchers in the Electro-Optics Center (EOC) at Penn State University’s Materials Research Institute have produced 100-mm diameter graphene wafers, claiming the achievement as a milestone in the development of graphene for next-generation high-frequency electronic devices.

Using silicon sublimation, EOC researchers David Snyder and Randy Cavalero thermally processed silicon carbide wafers in a physical vapor transport furnace until the silicon migrated away from the surface, leaving behind a layer of carbon that formed into a one- to two-atom-thick film of graphene on the wafer surface, EOC said.

EOC researchers are initially focusing on graphene materials to improve the transistor performance in various RF applications, with Penn State developing graphene device processing to enhance graphene transistor performance. The university also claims to have fabricated RF field effect transistors on 100-mm graphene wafers.

http://www.edn.com/article/CA6717531.html?nid=3351&rid=349798

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