Diffusion model of p-n junction (diode) - conductance prevented by Anderson localization

Discussion in 'Physics & Math' started by Jarek Duda, Dec 27, 2021.

  1. Jarek Duda Registered Senior Member

    Messages:
    229
    Just prepared: https://arxiv.org/pdf/2112.12557
    While textbook explanation of p-n junction ( https://en.wikipedia.org/wiki/P–n_junction ) looks quite heuristic, this is just using statistical mechanics - no "holes", only electron dynamics.

    Lattice 60x30 atoms below, dopants of different potentials are presented as red/green dots, grayness shows calculated electron densities, arrows show local currents.
    The model is:
    - use 3 types of potentials: of individual atoms + from external voltage + mean-field self interaction (from found charge density),
    - apply entropy maximizing diffusion ( https://en.wikipedia.org/wiki/Maximal_entropy_random_walk ),
    getting e.g. below diagrams.

    Are there there others atomic-scale conductance models?
    What applications could they have, e.g. some technology optimization?

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    ps. simpler simulator: https://demonstrations.wolfram.com/ElectronConductanceModelsUsingMaximalEntropyRandomWalks/
    reddit discussion: https://www.reddit.com/r/electronics/comments/rmxjd4/inexpensive_atomicscale_conductance_model/
     

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